DocumentCode
1979363
Title
An 8-12 GHz 1 Watt GaAs FET Amplifier for TWT Replacement
Author
Arai, Youichi ; Sakane, T. ; Aono, Y. ; Sugawara, H.
Author_Institution
Transmission Systems Laboratory, Fujitsu Laboratories, Kawasaki, Japan.
fYear
1980
fDate
8-12 Sept. 1980
Firstpage
625
Lastpage
629
Abstract
A high gain broad-band GaAs FET power amplifier was developed for TWT replacement. The amplifier outputs 1 watt at the 1 dB gain compression point, and has a gain of more than 50 dB over the operating frequency range from 8 to 12 GHz. Designing a high power GaAs FET amplifier with broad-band is very difficult due to the very low input impedance of high power GaAs FETs. Computer simulation was used to investigate bandwidth limitations of a high power amplifier which used high power GaAs FETs. The simulation made it possible to obtain the difference between the maximum available gain of FETs and the gain of a broad-band amplifier operating at 8 to 12 GHz. The results were used to choose the FETs for this amplifier.
Keywords
Bandwidth; Circuits; FETs; Frequency; Gain measurement; Gallium arsenide; High power amplifiers; Laboratories; Power measurement; Scattering parameters;
fLanguage
English
Publisher
ieee
Conference_Titel
Microwave Conference, 1980. 10th European
Conference_Location
Warszawa, Poland
Type
conf
DOI
10.1109/EUMA.1980.332882
Filename
4131556
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