Novel Measurement Technique Allows Full Two-Port Characterisation of GaAs Power MESFETs

An original measurement technique has been developed which permits full two-port characterisation of GaAs power MESFETs under non-linear signal drive conditions. Measurement results are presented showing the variation across C-band of each of the device two-port parameters with signal drive level, and their dependance on the transistor terminal loads. Results derived by this technique correlate well with those measured by the load-pull method.