DocumentCode :
1979470
Title :
X Band GaAs FET Oscillator Large Signal Design
Author :
Sautereauj, J.F. ; Graffeuil, J. ; Tantarongroj, K. ; Rossel, P.
Author_Institution :
Université P. Sabatier TOULOUSE 31400 - FRANCE - GRECO MICROONDES. - LAAS TOULOUSE - 7, Avenue Colonel Roche - 31400 - TOULOUSE.
fYear :
1980
fDate :
8-12 Sept. 1980
Firstpage :
645
Lastpage :
649
Abstract :
We present a large signal time domain theoretical approach of X band GaAs FET oscillators, by means of a network time domain analysis programm IMAG III. Experimental results, and general equations for maximum output power, are given.
Keywords :
FETs; Frequency; Gallium arsenide; National electric code; Oscillators; Packaging; Power generation; Signal design; Space vector pulse width modulation; Time domain analysis;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Microwave Conference, 1980. 10th European
Conference_Location :
Warszawa, Poland
Type :
conf
DOI :
10.1109/EUMA.1980.332775
Filename :
4131560
Link To Document :
https://search.ricest.ac.ir/dl/search/defaultta.aspx?DTC=49&DC=1979470
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