• DocumentCode
    1979533
  • Title

    New Microwave Detector Employing Nb/GaAs Super-Schottky Contact

  • Author

    Kataoka, S. ; Sugiyama, Y. ; Tacano, M. ; Sakai, S. ; Komamiya, Y.

  • fYear
    1980
  • fDate
    8-12 Sept. 1980
  • Firstpage
    662
  • Lastpage
    666
  • Abstract
    A super-Schottky contact diode made of Nb on heavily doped p-GaAs has been fabricated by electron-beam deposition under high vacuum, resulting in a long life and very reliable characteristics with estimated detector current responsivity S¿1500 V¿1 and NEP ¿ 1.2 × 10¿15 w/¿HZ at 4.2 K under optimum bias conditions.
  • Keywords
    Detectors; Gallium arsenide; Niobium; Schottky diodes; Semiconductor device measurement; Semiconductor diodes; Superconducting devices; Superconducting films; Superconducting microwave devices; Superconducting transition temperature;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Microwave Conference, 1980. 10th European
  • Conference_Location
    Warszawa, Poland
  • Type

    conf

  • DOI
    10.1109/EUMA.1980.332778
  • Filename
    4131563
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=1979533