Title :
High-power GaN diode pumped Q-switch Pr3+-doped LiYF4 laser
Author :
Kojou, Junichiro ; Watanbe, Yojiro ; Kannari, Fumihiko
Author_Institution :
Dept. of Electron. & Electr. Eng., Keio Univ., Yokohama, Japan
Abstract :
A Q-switch Pr:LiYF4 laser at 639 nm pumped by a high-power GaN laser diode is demonstrated. The highest laser peak power of 4.8 W with a pulsewidth of 270 ns is obtained at 7.7 kHz.
Keywords :
Q-switching; lithium compounds; optical pulse generation; optical pumping; praseodymium; solid lasers; yttrium compounds; GaN; LiYF4:Pr; Pr3+-doped LiYF4 laser; Q-switch laser; diode pumped laser; frequency 7.7 kHz; high-power GaN laser diode; laser pulsewidth; power 4.8 W; time 2.9 ns; visible laser sources; wavelength 639 nm; Diode lasers; Gallium nitride; Laser beams; Laser excitation; Laser transitions; Lenses; Optical resonators; Power lasers; Pump lasers; Switches; AO-Q Switch; GaN LD; Pr:LiYF4;
Conference_Titel :
Lasers & Electro Optics & The Pacific Rim Conference on Lasers and Electro-Optics, 2009. CLEO/PACIFIC RIM '09. Conference on
Conference_Location :
Shanghai
Print_ISBN :
978-1-4244-3829-7
Electronic_ISBN :
978-1-4244-3830-3
DOI :
10.1109/CLEOPR.2009.5292555
