• DocumentCode
    1979548
  • Title

    High-power GaN diode pumped Q-switch Pr3+-doped LiYF4 laser

  • Author

    Kojou, Junichiro ; Watanbe, Yojiro ; Kannari, Fumihiko

  • Author_Institution
    Dept. of Electron. & Electr. Eng., Keio Univ., Yokohama, Japan
  • fYear
    2009
  • fDate
    30-3 Aug. 2009
  • Firstpage
    1
  • Lastpage
    2
  • Abstract
    A Q-switch Pr:LiYF4 laser at 639 nm pumped by a high-power GaN laser diode is demonstrated. The highest laser peak power of 4.8 W with a pulsewidth of 270 ns is obtained at 7.7 kHz.
  • Keywords
    Q-switching; lithium compounds; optical pulse generation; optical pumping; praseodymium; solid lasers; yttrium compounds; GaN; LiYF4:Pr; Pr3+-doped LiYF4 laser; Q-switch laser; diode pumped laser; frequency 7.7 kHz; high-power GaN laser diode; laser pulsewidth; power 4.8 W; time 2.9 ns; visible laser sources; wavelength 639 nm; Diode lasers; Gallium nitride; Laser beams; Laser excitation; Laser transitions; Lenses; Optical resonators; Power lasers; Pump lasers; Switches; AO-Q Switch; GaN LD; Pr:LiYF4;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Lasers & Electro Optics & The Pacific Rim Conference on Lasers and Electro-Optics, 2009. CLEO/PACIFIC RIM '09. Conference on
  • Conference_Location
    Shanghai
  • Print_ISBN
    978-1-4244-3829-7
  • Electronic_ISBN
    978-1-4244-3830-3
  • Type

    conf

  • DOI
    10.1109/CLEOPR.2009.5292555
  • Filename
    5292555
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=1979548