DocumentCode
1979573
Title
Uniformly Ion Implantation for GaAs FETs - Relation to Material and Processing Variabies
Author
Leigh, P.A. ; McIntyre, N
Author_Institution
British Telecom Research Laboratories, Martlesham Heath, Ipswich, Suffolk, UK, IP5 7RE
fYear
1980
fDate
8-12 Sept. 1980
Firstpage
672
Lastpage
676
Abstract
Uniformly ion implanted semi-insulating wafers of gallium arsenide are desirable if the material is ever to be used for high yield integrated circuit manufacture. In this work an established implantation and device technology is described. Careful measurements and characterisation of implanted samples from different suppliers relate material properties to electrical measurements of sheet carrier concentration, mobility and profiles. Variations in processing procedure and material are then related to FET device parameters using both DC and RF characterisation.
Keywords
Electric variables measurement; FETs; Gallium arsenide; Integrated circuit manufacture; Integrated circuit measurements; Integrated circuit technology; Integrated circuit yield; Ion implantation; Material properties; Sheet materials;
fLanguage
English
Publisher
ieee
Conference_Titel
Microwave Conference, 1980. 10th European
Conference_Location
Warszawa, Poland
Type
conf
DOI
10.1109/EUMA.1980.332780
Filename
4131565
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