Title :
A band-to-band Coulomb interaction model for refractive indices of Al/sub x/Ga/sub 1-x/As and InGaAs ternary materials at photon energies near and above the band-gap
Author :
Lin, E.Y. ; Lay, T.S. ; Chang, T.Y.
Author_Institution :
Inst. of Electro-Optical Eng., Nat. Sun Yat-Sen Univ., Kaohsiung
Abstract :
Refractive indices of ternary materials at photon energies somewhat above the bandgap have been modeled from Kramers-Kronig transform through an absorption model with Coulomb interaction and a double-Lorentzian broadening in employing Vegard´s law
Keywords :
III-V semiconductors; Kramers-Kronig relations; aluminium compounds; energy gap; gallium arsenide; indium compounds; refractive index; AlGaAs; InGaAs; Kramers-Kronig transform; Vegard law; absorption model; band-band Coulomb interaction model; band-gap; double-Lorentzian broadening; photon energy; refractive index; Absorption; Gallium arsenide; Helium; III-V semiconductor materials; Indium gallium arsenide; Optical materials; Optical refraction; Optical variables control; Photonic band gap; Refractive index;
Conference_Titel :
Indium Phosphide and Related Materials Conference Proceedings, 2006 International Conference on
Conference_Location :
Princeton, NJ
Print_ISBN :
0-7803-9558-1
DOI :
10.1109/ICIPRM.2006.1634135
