Title :
A Novel Noise Model for Submicrometer Gate FET´s
Author :
Carnez, B. ; Cappy, A. ; Salmer, G. ; Constant, E.
Author_Institution :
Centre Hyperfréquences et Semiconducteurs, L.A. C.N.R.S. n° 287 et GRECO Microondes. Université des Sciences et Techniques de Lille I. 59655 Villeneuve d´´Ascq Cedex (France).
Abstract :
A novel noise model for submicrometer gate FET´s is described: it takes into account the non stationnary electron dynamics effects. It allows us to evaluate the intrinsic and extrinsic FET noise figure and to give some informations about the origin of noise in MESFET. A comparison between theoretical predictions and experimental results is given. The noise figure dependence upon the gate length, the gate to source voltage and the parasitic elements are also precised.
Keywords :
Circuit noise; Electrons; Equations; Fluctuations; MESFETs; Microwave FETs; Noise figure; Semiconductor device noise; Steady-state; Voltage;
Conference_Titel :
Microwave Conference, 1980. 10th European
Conference_Location :
Warszawa, Poland
DOI :
10.1109/EUMA.1980.332782
