DocumentCode :
1979604
Title :
4 GHz Band FET Amplifier with the Noise Temperature of 55K at --50°C
Author :
Nakazawa, T. ; Ogiso, K. ; Takeda, F. ; Miyazaki, S. ; Nara, A.
Author_Institution :
MITSUBISHI ELECTRIC CORPORATION, 325 Kamimachiya, Kamakura City, Kanagawa Prefecture, Japan 247
fYear :
1980
fDate :
8-12 Sept. 1980
Firstpage :
690
Lastpage :
694
Abstract :
Thermoelectrically cooled 4 GHz band FET amplifier with noise temperature of 55K has been developed for low noise amplifier of satellite communications earth stations. In this amplifier with the FET which was developed in our company, the new design method of broadband noise matching is applied. The difference between maximum and minimum noise temperature within the frequency band of this amplifier is 3K and is coincident with theoretical value.
Keywords :
Broadband amplifiers; Circuit noise; Design methodology; FETs; Frequency; Low-noise amplifiers; Satellite communication; Satellite ground stations; Temperature; Thermoelectricity;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Microwave Conference, 1980. 10th European
Conference_Location :
Warszawa, Poland
Type :
conf
DOI :
10.1109/EUMA.1980.332783
Filename :
4131568
Link To Document :
https://search.ricest.ac.ir/dl/search/defaultta.aspx?DTC=49&DC=1979604
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