Title :
Characteristics of Low-Noise GaAs Mesfets from 300K to 20K
Author :
Weinreb, S. ; Brookes, T.M.
Author_Institution :
National Radio Astronomy Observatory, Charlottesville, Va., 22903.
Abstract :
Measurements of the noise temperature and transconductance of a GaAs field-effect transistor at temperatures of 300K and 17K are reported as a function of drain current. These results are compared with theory and the contributions of various noise mechanisms to the total noise temperature are presented.
Keywords :
Current measurement; Extraterrestrial measurements; Gallium arsenide; MESFETs; Noise figure; Noise generators; Noise measurement; Temperature measurement; Thermal resistance; Transconductance;
Conference_Titel :
Microwave Conference, 1980. 10th European
Conference_Location :
Warszawa, Poland
DOI :
10.1109/EUMA.1980.332784
