50-50Ω Packaged GaAs FET for X and Ku Bands

Everyone knows how difficult it is to use packaged FETS above 8 GHz. Parasitic reaction, increased input-output VSWR and matching circuit losses reduce stability, power gain, output power and bandwidth. Medium power FETs internally matched and self biased with lumped elements in X and Ku bands are presented with 50, 100 and 500 mW of output power.