Title :
Anomalous short channel effects in Indium implanted nMOSFETs
Author :
Bouillon, P. ; Gwoziecki, R. ; Skotnicki, T.
Author_Institution :
CNET, Meylan, France
Abstract :
A long distance roll-off, occurring on Indium-doped NMOS architectures, is experimentally observed and analyzed. It is suggested that Indium is prone to a local interstitial-assisted deactivation in the junction vicinity. This interpretation is consistent with the results of material-, device- and modeling-oriented experiments. In order to recover good electrical performances, it is shown that Indium deactivation has to be reduced thanks to an interstitial-free process.
Keywords :
MOSFET; indium; interstitials; ion implantation; Si:In; indium implanted nMOSFET; interstitial-assisted deactivation; roll-off; short channel effect; Annealing; Boron; CMOS technology; Data mining; Indium; MOS devices; MOSFETs; Robustness; Silicon; Solids;
Conference_Titel :
Electron Devices Meeting, 1997. IEDM '97. Technical Digest., International
Conference_Location :
Washington, DC, USA
Print_ISBN :
0-7803-4100-7
DOI :
10.1109/IEDM.1997.650356
