• DocumentCode
    1979721
  • Title

    InP HEMTs: physics, applications, and future

  • Author

    Endoh, A. ; Yamashita, Y. ; Shinohara, K. ; Higashiwaki, M. ; Hikosaka, K. ; Matsui, T. ; Hiyamizu, S. ; Mimura, T.

  • Author_Institution
    Fujitsu Labs. Ltd., Kanagawa, Japan
  • fYear
    2003
  • fDate
    23-25 June 2003
  • Firstpage
    5
  • Lastpage
    8
  • Abstract
    In this paper, we review our recent results obtained for InP-based HEMTs. We have developed several fabrication techniques, and obtained an ultrahigh f/sub T/ of 562 GHz for a 25 nm long gate pseudomorphic InAlAs/InGaAs HEMT. We also discuss possible applications of our HEMTs and the future of InP-based HEMTs.
  • Keywords
    III-V semiconductors; UHF transistors; aluminium compounds; gallium arsenide; high electron mobility transistors; indium compounds; semiconductor epitaxial layers; 25 nm; 562 GHz; HEMTs application; InAlAs-InGaAs; InP HEMTs; fabrication techniques; gate pseudomorphic InAlAs/InGaAs HEMT; ultrahigh frequency; Capacitance measurement; Electron mobility; Etching; Fabrication; HEMTs; Indium compounds; Indium phosphide; MODFETs; PHEMTs; Physics;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Device Research Conference, 2003
  • Conference_Location
    Salt Lake City, UT, USA
  • Print_ISBN
    0-7803-7727-3
  • Type

    conf

  • DOI
    10.1109/DRC.2003.1226847
  • Filename
    1226847
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=1979721