Title :
InP HEMTs: physics, applications, and future
Author :
Endoh, A. ; Yamashita, Y. ; Shinohara, K. ; Higashiwaki, M. ; Hikosaka, K. ; Matsui, T. ; Hiyamizu, S. ; Mimura, T.
Author_Institution :
Fujitsu Labs. Ltd., Kanagawa, Japan
Abstract :
In this paper, we review our recent results obtained for InP-based HEMTs. We have developed several fabrication techniques, and obtained an ultrahigh f/sub T/ of 562 GHz for a 25 nm long gate pseudomorphic InAlAs/InGaAs HEMT. We also discuss possible applications of our HEMTs and the future of InP-based HEMTs.
Keywords :
III-V semiconductors; UHF transistors; aluminium compounds; gallium arsenide; high electron mobility transistors; indium compounds; semiconductor epitaxial layers; 25 nm; 562 GHz; HEMTs application; InAlAs-InGaAs; InP HEMTs; fabrication techniques; gate pseudomorphic InAlAs/InGaAs HEMT; ultrahigh frequency; Capacitance measurement; Electron mobility; Etching; Fabrication; HEMTs; Indium compounds; Indium phosphide; MODFETs; PHEMTs; Physics;
Conference_Titel :
Device Research Conference, 2003
Conference_Location :
Salt Lake City, UT, USA
Print_ISBN :
0-7803-7727-3
DOI :
10.1109/DRC.2003.1226847
