Title :
Antimonide based Quantum Well Transistors for High Speed, Low Power Logic Applications
Author_Institution :
Components Res., Intel Corp., Hillsboro, OR
Abstract :
We have recently demonstrated indium antimonide based quantum well field effect transistors with 85 nm physical gate length. Enhancement mode n-channel InSb quantum well transistors (QWFETs) exhibit unity gain cutoff frequency, exceeding 300 GHz at an operating voltage of only 0.5 V VDS. The InSb quantum well transistors demonstrate 50% higher intrinsic speed, than silicon NMOS transistors while consuming 10 times less active DC power
Keywords :
III-V semiconductors; field effect transistors; indium compounds; quantum well devices; 85 nm; InSb; enhancement mode; indium antimonide; quantum well field effect transistors; quantum well transistors; unity gain cutoff frequency; Etching; FETs; Frequency; Gallium arsenide; High-K gate dielectrics; Indium; Leakage current; Logic devices; Photonic band gap; Voltage;
Conference_Titel :
Indium Phosphide and Related Materials Conference Proceedings, 2006 International Conference on
Conference_Location :
Princeton, NJ
Print_ISBN :
0-7803-9558-1
DOI :
10.1109/ICIPRM.2006.1634141
