Title :
A Manufacturable True E-Mode MHEMT with High Static and Dynamic Performances
Author :
Maher, H. ; Baudet, P. ; El Makoudi, I. ; Périchaud, M.G. ; Bellaiche, J. ; Renvoisé, M. ; Rouchy, U. ; Frijlink, P.
Author_Institution :
OMMIC/PHILIPS, Limeil-Brevannes
Abstract :
A high DC and RF performance, fully passivated, true enhancement-mode 100 nm MHEMT is demonstrated. This transistor is a good candidate for high performance low noise and low power consumption applications
Keywords :
high electron mobility transistors; passivation; MHEMT; enhancement-mode; Circuit noise; Electron mobility; Gallium arsenide; HEMTs; Indium compounds; Leakage current; Manufacturing; Substrates; Voltage; mHEMTs;
Conference_Titel :
Indium Phosphide and Related Materials Conference Proceedings, 2006 International Conference on
Conference_Location :
Princeton, NJ
Print_ISBN :
0-7803-9558-1
DOI :
10.1109/ICIPRM.2006.1634144
