DocumentCode
1979818
Title
A Manufacturable True E-Mode MHEMT with High Static and Dynamic Performances
Author
Maher, H. ; Baudet, P. ; El Makoudi, I. ; Périchaud, M.G. ; Bellaiche, J. ; Renvoisé, M. ; Rouchy, U. ; Frijlink, P.
Author_Institution
OMMIC/PHILIPS, Limeil-Brevannes
fYear
0
fDate
0-0 0
Firstpage
185
Lastpage
187
Abstract
A high DC and RF performance, fully passivated, true enhancement-mode 100 nm MHEMT is demonstrated. This transistor is a good candidate for high performance low noise and low power consumption applications
Keywords
high electron mobility transistors; passivation; MHEMT; enhancement-mode; Circuit noise; Electron mobility; Gallium arsenide; HEMTs; Indium compounds; Leakage current; Manufacturing; Substrates; Voltage; mHEMTs;
fLanguage
English
Publisher
ieee
Conference_Titel
Indium Phosphide and Related Materials Conference Proceedings, 2006 International Conference on
Conference_Location
Princeton, NJ
Print_ISBN
0-7803-9558-1
Type
conf
DOI
10.1109/ICIPRM.2006.1634144
Filename
1634144
Link To Document