Title :
Gate Sinking Effect of 0. 1 μm InP HEMT MMICs Using Pt/Ti/Pt/Au
Author :
Chou, Y.C. ; Lai, R. ; Leung, D. ; Kan, Q. ; Farkas, D. ; Eng, D. ; Wojtowicz, M. ; Chin, P. ; Block, T. ; Oki, A.
Author_Institution :
Northrop Grumman Space Technol., Redondo Beach, CA
Abstract :
Gate sinking effect of 0.1 mum InAlAs/InGaAs/InP HEMT MMICs (with Pt/Ti/Pt/Au gate metals) subjected to elevated temperature lifetests has been investigated. The results show that Pt sinking is the dominant degradation mechanism caused by Pt diffusing into the In0.52Al0.4As Schottky barrier layer. Pt sinking explains the observed evolutions of Schottky diodes, Ids-Gm transfer characteristics, and the S21 increase. Scanning-transmission-electron-microscope micrographs substantiate the alleviation of Schottky junction degradation of InP HEMTs using Pt/Ti/Pt/Au gates. Moreover, 2-temperature lifetest shows that the activation energy is approximately 1.55 eV, based on a failure criterion of DeltaIDSS = -20%. The results from this study demonstrate that Pt sinking is the primary degradation mechanism of 0.1 mum InP HEMT MMICs with Pt/Ti/Pt/Au gate metals
Keywords :
III-V semiconductors; MMIC; aluminium compounds; diffusion; gallium arsenide; gold; high electron mobility transistors; indium compounds; life testing; platinum; scanning electron microscopy; semiconductor device testing; titanium; Ids-Gm transfer characteristics; In0.52Al0.4As Schottky barrier layer; InAlAs-InGaAs-InP; InAlAs/InGaAs/InP HEMT MMIC; Pt diffusion; Pt-Ti-Pt-Au; Pt/Ti/Pt/Au gate metal; Schottky diodes; activation energy; gate sinking effect; lifetest; scanning-transmission-electron-microscope; Degradation; Gold; HEMTs; Indium compounds; Indium gallium arsenide; Indium phosphide; MMICs; Schottky barriers; Schottky diodes; Temperature;
Conference_Titel :
Indium Phosphide and Related Materials Conference Proceedings, 2006 International Conference on
Conference_Location :
Princeton, NJ
Print_ISBN :
0-7803-9558-1
DOI :
10.1109/ICIPRM.2006.1634145
