Title :
Highly-ordered and highly-stacked (150-layers) quantum dots
Author :
Akahane, Kouichi ; Yamamoto, Naokatsu ; Gozu, S. ; Ueta, Akio ; Ohtani, Noboru ; Tsuchiya, Masahiro
Author_Institution :
National Inst. of Information & Commun. Technol., Tokyo
Abstract :
We review our successful growth of stacks of InAs quantum dots (QDs) on InP(311)B substrates using a novel strain-control technique and improved the size uniformity of the QDs by precisely controlling the composition of the strain-compensating spacer layers. In a stack of 150 InAs QD layers, the density of the QDs exceeds 5times1012/cm2 which cannot be obtained using conventional techniques for fabricating QDs. In a sample of a 150-layer stack, the QDs show good size uniformity and an ordered structure. In addition, a strong 1.5 mum photoluminescence emission was observed from this sample at room temperature
Keywords :
III-V semiconductors; indium compounds; photoluminescence; semiconductor growth; semiconductor quantum dots; 293 to 298 K; InAs quantum dots; InAs-InPB; InP(311)B substrates; InPB; highly-ordered quantum dots; highly-stacked quantum dots; ordered structure; photoluminescence emission; size uniformity; strain-compensating spacer layers; strain-control technique; Capacitive sensors; Electron beams; Gallium arsenide; Optical devices; Photoluminescence; Quantum dots; Self-assembly; Stacking; Substrates; US Department of Transportation;
Conference_Titel :
Indium Phosphide and Related Materials Conference Proceedings, 2006 International Conference on
Conference_Location :
Princeton, NJ
Print_ISBN :
0-7803-9558-1
DOI :
10.1109/ICIPRM.2006.1634146
