P-channel InGaN-HFET structure based on polarization doping

Author

Zimmermann, T. ; Neuburger, M. ; Kunze, M. ; Daumiller, I. ; Denisenko, A. ; Dadgar, A. ; Krost, A. ; Kohn, E.

Author_Institution

Dept. of Electron Devices & Circuits, Ulm Univ., Germany

fYear

2003

fDate

23-25 June 2003

Firstpage

19

Lastpage

20

Abstract

In this paper, a 2DHG is developed at the lower InGaN/GaN interface with the countercharge supplied by surface acceptors. The position of the 2DHG is verified by CV- profiling. Hall measurements at 66K indicate a high hole mobility of 700 cm/sup 2//Vs. The channel is already activated at 20K confirming indeed the presence of a 2DHG.

Keywords

Hall effect; band structure; field effect transistors; gallium compounds; hole mobility; impurity states; indium compounds; semiconductor heterojunctions; voltammetry (chemical analysis); wide band gap semiconductors; 20 K; 66 K; CV- profiling; Hall measurements; InGaN-GaN; InGaN/GaN interface; P-channel InGaN-HFET structure; countercharge; hole mobility; polarization doping; surface acceptors; Aluminum gallium nitride; Capacitive sensors; Circuits; Current density; Electron devices; Epitaxial growth; Gallium nitride; Optical polarization; Physics; Semiconductor device doping;

fLanguage

English

Publisher

ieee

Conference_Titel

Device Research Conference, 2003

Conference_Location

Salt Lake City, UT, USA

Print_ISBN

0-7803-7727-3

Type

conf

DOI

10.1109/DRC.2003.1226852

Filename

1226852