• DocumentCode
    1979871
  • Title

    Emission-wavelength extension of InAs/GaAs quantum dots by controlling lattice-mismatch strain

  • Author

    Inoue, T. ; Matsushita, K. ; Kikuno, M. ; Kita, T. ; Wada, O. ; Mori, H. ; Yasuda, H.

  • Author_Institution
    Dept. of Electr. & Electron. Eng., Kobe Univ.
  • fYear
    0
  • fDate
    0-0 0
  • Firstpage
    201
  • Lastpage
    203
  • Abstract
    Nitrided InAs quantum dots (QDs) have been shown to suppress In-segregation in QDs and achieve emission at 1.3 mum. Effects of strain on structural and optical properties of QDs have been demonstrated through transmission electron microscope and photoluminescence analyses
  • Keywords
    III-V semiconductors; gallium arsenide; indium compounds; nitridation; photoluminescence; segregation; semiconductor quantum dots; transmission electron microscopy; 1.3 mum; In-segregation; InAs-GaAs; InAs/GaAs quantum dots; emission; emission-wavelength extension; lattice-mismatch strain; nitrided InAs quantum dots; optical properties; photoluminescence; strain effects; structural properties; transmission electron microscope; Capacitive sensors; Electron optics; Gallium arsenide; Quantum dots; Quantum mechanics; Radio frequency; Stimulated emission; Strain control; US Department of Transportation; Voltage control;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Indium Phosphide and Related Materials Conference Proceedings, 2006 International Conference on
  • Conference_Location
    Princeton, NJ
  • Print_ISBN
    0-7803-9558-1
  • Type

    conf

  • DOI
    10.1109/ICIPRM.2006.1634148
  • Filename
    1634148
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=1979871