Title :
Emission-wavelength extension of InAs/GaAs quantum dots by controlling lattice-mismatch strain
Author :
Inoue, T. ; Matsushita, K. ; Kikuno, M. ; Kita, T. ; Wada, O. ; Mori, H. ; Yasuda, H.
Author_Institution :
Dept. of Electr. & Electron. Eng., Kobe Univ.
Abstract :
Nitrided InAs quantum dots (QDs) have been shown to suppress In-segregation in QDs and achieve emission at 1.3 mum. Effects of strain on structural and optical properties of QDs have been demonstrated through transmission electron microscope and photoluminescence analyses
Keywords :
III-V semiconductors; gallium arsenide; indium compounds; nitridation; photoluminescence; segregation; semiconductor quantum dots; transmission electron microscopy; 1.3 mum; In-segregation; InAs-GaAs; InAs/GaAs quantum dots; emission; emission-wavelength extension; lattice-mismatch strain; nitrided InAs quantum dots; optical properties; photoluminescence; strain effects; structural properties; transmission electron microscope; Capacitive sensors; Electron optics; Gallium arsenide; Quantum dots; Quantum mechanics; Radio frequency; Stimulated emission; Strain control; US Department of Transportation; Voltage control;
Conference_Titel :
Indium Phosphide and Related Materials Conference Proceedings, 2006 International Conference on
Conference_Location :
Princeton, NJ
Print_ISBN :
0-7803-9558-1
DOI :
10.1109/ICIPRM.2006.1634148
