DocumentCode :
1979888
Title :
Microwave performance of diamond surface-channel FET
Author :
Kasu, Makoto ; Kubovic, M. ; Aleksov, A. ; Kallfass, I. ; Spitzberg, U. ; Kobayashi, N. ; Schumacher, H. ; Kohn, E.
Author_Institution :
Dept. of Electron Devices and Circuits, Ulm Univ., Germany
fYear :
2003
fDate :
23-25 June 2003
Firstpage :
21
Lastpage :
22
Abstract :
In this paper, the microwave characteristics of diamond FETs with 0.2/spl mu/m gate length (L/sub G/) are discussed.
Keywords :
diamond; elemental semiconductors; field effect transistors; microwave measurement; noise measurement; 0.2 micron; diamond surface-channel FET; microwave noise measurements; microwave properties; Circuits; Cutoff frequency; Electric breakdown; Electron devices; Laboratories; Microwave FETs; Microwave devices; Noise figure; Noise measurement; Thermal conductivity;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Device Research Conference, 2003
Conference_Location :
Salt Lake City, UT, USA
Print_ISBN :
0-7803-7727-3
Type :
conf
DOI :
10.1109/DRC.2003.1226853
Filename :
1226853
Link To Document :
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