Title :
A 60 GHz dual-mode power amplifier with 17.4 dBm output power and 29.3% PAE in 40-nm CMOS
Author :
Zhao, Dixian ; Kulkarni, Shailesh ; Reynaert, Patrick
Author_Institution :
ESAT-MICAS, Katholieke Univ. Leuven, Leuven, Belgium
Abstract :
A 60 GHz dual-mode power amplifier (PA) is implemented in 40-nm bulk CMOS technology. The PA consists of two unit PAs with a transformer-based power combiner at the output. To reduce the power consumption and hence extend battery life time, one unit PA is tuned off in low-power mode. A switch is employed to short the output of this off-state unit PA and thus improves the back-off efficiency. The PA achieves a saturated output power (PSAT) of 17.4 dBm with 29.3% PAE in high-power mode and a PSAT of 12.6 dBm with 19.6% PAE in low-power mode. The PA with the power combiner only consumes an active area of 0.074 mm2. The reliability measurements are also performed and the PA has an estimated lifetime of 80613 hours.
Keywords :
CMOS integrated circuits; low-power electronics; power amplifiers; power combiners; power consumption; reliability; PAE; battery life time; bulk CMOS technology; dual-mode power amplifier; frequency 60 GHz; low-power mode; power consumption; reliability measurements; saturated output power; size 40 nm; transformer-based power combiner; CMOS integrated circuits; CMOS technology; Gain; Power amplifiers; Power generation; Reliability; Switches;
Conference_Titel :
ESSCIRC (ESSCIRC), 2012 Proceedings of the
Conference_Location :
Bordeaux
Print_ISBN :
978-1-4673-2212-6
Electronic_ISBN :
1930-8833
DOI :
10.1109/ESSCIRC.2012.6341323