DocumentCode
1979901
Title
Impatt Power Amplifier for Microwave-Link-System
Author
Gill, H.S.
Author_Institution
AEG-Telefunken Backnang, Fachbereich Richtfunk
fYear
1980
fDate
8-12 Sept. 1980
Firstpage
764
Lastpage
768
Abstract
The paper describes an impatt amplifier with 20 dB gain and 1,6 W output power, which is being used in FM microwave link systems for amplification of RF-Signals. The link system is capable of transmitting 1260 speech channels or one TV signal for long haul applications from 6.4 to 8.5 GHz. A silicon double drift impatt diode is used in an injection locked oscillator mode with 20 dB gain. The FM amplifier is designed in evanescent-mode-waveguide technique and the RF circuit is optimized to achieve the desired locking bandwidth and noise figure using a double tuned circuit. The noise and transmission properties of the amplifier are calculated and compared with the measured response.
Keywords
Diodes; Gain; Injection-locked oscillators; Microwave amplifiers; Power amplifiers; Power generation; Radiofrequency amplifiers; Silicon; Speech; TV;
fLanguage
English
Publisher
ieee
Conference_Titel
Microwave Conference, 1980. 10th European
Conference_Location
Warszawa, Poland
Type
conf
DOI
10.1109/EUMA.1980.332797
Filename
4131582
Link To Document