• DocumentCode
    1979938
  • Title

    Fabrication and characterization of high current gain ((β=430) and high power (23 A-500 V) 4H-SiC darlington bipolar transistors

  • Author

    Luo, Yanbin ; Zhang, Jianhui ; Alexandrov, Petre ; Fursin, Leonid ; Zhao, Jian H.

  • Author_Institution
    Dept. of Electr. & Comput. Eng., Rutgers Univ., Piscataway, NJ, USA
  • fYear
    2003
  • fDate
    23-25 June 2003
  • Firstpage
    25
  • Abstract
    In this paper, we reports a hybrid Darlington with not only a substantially increased current gain of 430 but also a substantially increase power rating of 23A-500V.
  • Keywords
    bipolar transistors; silicon compounds; 23 A; 4H-SiC darlington bipolar transistors; 500 V; SiC; current gain; hybrid Darlington; Bipolar transistors; Fabrication;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Device Research Conference, 2003
  • Print_ISBN
    0-7803-7727-3
  • Type

    conf

  • DOI
    10.1109/DRC.2003.1226855
  • Filename
    1226855
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=1979938