• DocumentCode
    1979945
  • Title

    /spl lambda/ = 1.3 /spl mu/m high density InGaAs/GaAs quantum dots grown by molecular beam epitaxy

  • Author

    Feng, David J. ; Tzeng, T.E. ; Chen, C.Y. ; Lay, T.S. ; Chang, T.Y.

  • Author_Institution
    Inst. of Electro-Opt. Eng., Nat. Sun Yat-Sen Univ., Kaohsiung
  • fYear
    0
  • fDate
    0-0 0
  • Firstpage
    211
  • Lastpage
    213
  • Abstract
    InxGa1-xAs (x=0.5-0.75) QD´s of high density of 1.3 times 1011 cm-2 and uniform size (diameter ~ 23-nm and height ~ 4-nm) were obtained by MBE. lambda = 1.3 mum emission was observed for In0.65Ga0.35As QD´s capped with In0.1Ga0.9As
  • Keywords
    III-V semiconductors; gallium arsenide; indium compounds; molecular beam epitaxial growth; photoluminescence; semiconductor growth; semiconductor quantum dots; 1.3 mum; InGaAs-GaAs; MBE; capping; emission; high density InGaAs/GaAs quantum dots; molecular beam epitaxy; uniform quantum dot size; Annealing; Atomic force microscopy; Atomic measurements; Capacitive sensors; Force measurement; Gallium arsenide; Indium gallium arsenide; Molecular beam epitaxial growth; Quantum dots; US Department of Transportation;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Indium Phosphide and Related Materials Conference Proceedings, 2006 International Conference on
  • Conference_Location
    Princeton, NJ
  • Print_ISBN
    0-7803-9558-1
  • Type

    conf

  • DOI
    10.1109/ICIPRM.2006.1634151
  • Filename
    1634151
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=1979945