Title :
4H-SiC RF bipolar junction transistors
Author :
Perez, I. ; Torvik, J. ; Van Zeghbroeck, B.
Author_Institution :
PowerSicel Inc., Boulder, CO, USA
Abstract :
In this paper, we report on 4H-SiC bipolar junction transistors with record Dc and small signal RF characteristics. We have demonstrated devices with a power dissipation density of 3 MW/cm/sup 2/ and operation up to 580/spl deg/C. RF devices were measured with an f/sub t//f/sub MAX/ of 4/1.8 GHz, which to our knowledge are the highest values published to date for any SiC BJT. We designed and fabricated RF device structures with a 3/spl mu/m by 100 /spl mu/m emitter stripe. The device´s epitaxial layer structure is shown in fig. The device is fabricated by dry etching a double-mesa structure as described. The structure was subsequently passivated, followed by the deposition of the emitter/collector metal and the base metal. A second isolation layer and wiring metal then completed the device fabrication.
Keywords :
bipolar transistors; epitaxial growth; passivation; semiconductor epitaxial layers; semiconductor growth; silicon compounds; wide band gap semiconductors; 100 micron; 2.22 GHz; 3 micron; 580 degC; RF device structures; RF devices; SiC; SiC RF bipolar junction transistors; base metal; device fabrication; double-mesa structure; dry etching; emitter stripe; emitter/collector metal; epitaxial layer structure; isolation layer; passivation; power dissipation density; wiring metal; Doping; Fingers; MOSFETs; Material properties; Radio frequency; Silicon carbide; Temperature dependence; Testing; Thermal conductivity; Voltage;
Conference_Titel :
Device Research Conference, 2003
Conference_Location :
Salt Lake City, UT, USA
Print_ISBN :
0-7803-7727-3
DOI :
10.1109/DRC.2003.1226856
