• DocumentCode
    1979974
  • Title

    Ultra-narrow rectangular cross-section Si-Fin channel double-gate MOSFETs fabricated by using orientation-dependent wet etching

  • Author

    Liu, Y.X. ; Ishii, K. ; Tsutsumi, T. ; Masahara, M. ; Takashima, H. ; Suzuki, E.

  • Author_Institution
    Nanoelectron. Res. Inst., Nat. Inst. of Adv. Ind. Sci. & Technol., Tsukuba, Japan
  • fYear
    2003
  • fDate
    23-25 June 2003
  • Firstpage
    31
  • Lastpage
    32
  • Abstract
    In this paper, we report the Fin-type double-gate MOSFET (FXMOSFET) with an ideal rectangular cross section Si-Fin channel by using [110] oriented SOI wafers and orientation dependent wet etching.
  • Keywords
    MOSFET; elemental semiconductors; etching; silicon; silicon-on-insulator; Si; Si-Fin channel double-gate MOSFET; [110] oriented SOI wafers; orientation dependent wet etching; rectangular cross section; silicon on insulator; Doping; Fabrication; FinFETs; MOSFETs; Nanoelectronics; Oxidation; Shape; Textile industry; Voltage; Wet etching;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Device Research Conference, 2003
  • Conference_Location
    Salt Lake City, UT, USA
  • Print_ISBN
    0-7803-7727-3
  • Type

    conf

  • DOI
    10.1109/DRC.2003.1226857
  • Filename
    1226857
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=1979974