Title :
Application of top HfSiON layer for improved poly-gated HfO/sub 2/ PMOSFET performance
Author :
Cho, H.-J. ; Kang, C.S. ; Akbar, M.S. ; Onishi, K. ; Kim, Y.H. ; Choi, R. ; Lee, J.C.
Author_Institution :
Microelectron. Res. Center, Texas Univ., Austin, TX, USA
Abstract :
In this paper, application of amorphous HfSiON layer on HfO/sub 2/ was evaluated for improved poly-Si gated HfO/sub 2/ PMOSFET performance.HfSiON process by reoxidation method was developed and the effects of its use as a top layer of HfO/sub 2/ for PMOSFET were investigated. The top HfSiON layer was demonstrated to improve the characteristics of PMOSFET through better thermal stability and immunity to boron diffusion compared to HfON.
Keywords :
MOSFET; amorphous state; chemical interdiffusion; hafnium compounds; ion implantation; oxidation; rapid thermal annealing; silicon compounds; thermal stability; HfSiON-HfO/sub 2/; amorphous top HfSiON layer; boron diffusion; ion implantation; poly-gated HfO/sub 2/ PMOSFET; rapid thermal annealing; reoxidation method; thermal stability; Annealing; Artificial intelligence; Capacitance-voltage characteristics; Hafnium oxide; Implants; MOSFET circuits; Silicon; Sputtering; Voltage; Wet etching;
Conference_Titel :
Device Research Conference, 2003
Conference_Location :
Salt Lake City, UT, USA
Print_ISBN :
0-7803-7727-3
DOI :
10.1109/DRC.2003.1226860
