Application of top HfSiON layer for improved poly-gated HfO/sub 2/ PMOSFET performance

Author

Cho, H.-J. ; Kang, C.S. ; Akbar, M.S. ; Onishi, K. ; Kim, Y.H. ; Choi, R. ; Lee, J.C.

Author_Institution

Microelectron. Res. Center, Texas Univ., Austin, TX, USA

fYear

2003

fDate

23-25 June 2003

Firstpage

37

Lastpage

38

Abstract

In this paper, application of amorphous HfSiON layer on HfO/sub 2/ was evaluated for improved poly-Si gated HfO/sub 2/ PMOSFET performance.HfSiON process by reoxidation method was developed and the effects of its use as a top layer of HfO/sub 2/ for PMOSFET were investigated. The top HfSiON layer was demonstrated to improve the characteristics of PMOSFET through better thermal stability and immunity to boron diffusion compared to HfON.

Keywords

MOSFET; amorphous state; chemical interdiffusion; hafnium compounds; ion implantation; oxidation; rapid thermal annealing; silicon compounds; thermal stability; HfSiON-HfO/sub 2/; amorphous top HfSiON layer; boron diffusion; ion implantation; poly-gated HfO/sub 2/ PMOSFET; rapid thermal annealing; reoxidation method; thermal stability; Annealing; Artificial intelligence; Capacitance-voltage characteristics; Hafnium oxide; Implants; MOSFET circuits; Silicon; Sputtering; Voltage; Wet etching;

fLanguage

English

Publisher

ieee

Conference_Titel

Device Research Conference, 2003

Conference_Location

Salt Lake City, UT, USA

Print_ISBN

0-7803-7727-3

Type

conf

DOI

10.1109/DRC.2003.1226860

Filename

1226860