Title :
Advances in Microwave GaAs Power FET Device and Circuit Technologies
Author :
Tserng, Hua Quen
Author_Institution :
Central Research Laboratories, Texas Instruments Incorporated, Dallas, Texas, USA.
Abstract :
The latest advances in microwave GaAs power FET device and circuit technologies are discussed. Optimum device structures and design parameters for operating frequencies up to K-band are covered. Broadband matching networks for hybrid power GaAs FET amplifiers are described. These matching networks were obtained with CAD technique, using FET equivalent circuit models deduced from S-parameter characterization and modified for large-signal operation. Progress in the design and performance of monolithic power FET amplifiers is also presented.
Keywords :
Broadband amplifiers; Design automation; Frequency; Gallium arsenide; K-band; Microwave FETs; Microwave circuits; Microwave devices; Microwave technology; Power amplifiers;
Conference_Titel :
Microwave Conference, 1981. 11th European
Conference_Location :
Amsterdam, Netherlands
DOI :
10.1109/EUMA.1981.332984
