Title :
Determination of Series Resistance of Silicon Millimeter wave (Ka-Band) IMPATT Diodes
Author :
Pal, Tapas Kumar
Author_Institution :
DRDO, Res. Centre Imarat, Hyderabad
Abstract :
A computer based method to determine the series resistance of silicon Ka- band IMPATT diode from Small signal threshold condition is described. The values of series resistance are found to be 0.904 ohm - 1.013 ohm over a feasible range of current density 9.0 times 107 Amp/m2 - 1.2 times 108 Amp/m2 . The results obtained by the computer method agree well with the experimentally measured values of Series resistance 1.008 ohm - 1.067 ohm for various cap heights.
Keywords :
IMPATT diodes; current density; electric resistance; elemental semiconductors; millimetre wave diodes; semiconductor device models; silicon; Ka-band IMPATT diodes; Si; computer based method; current density; equivalent model; resistance 0.904 ohm to 1.013 ohm; resistance 1.008 ohm to 1.067 ohm; series resistance determination; silicon millimeter wave diodes; small signal threshold condition; Circuit analysis computing; Diodes; Electrical resistance measurement; Millimeter wave technology; Packaging; Power generation; RF signals; Radio frequency; Signal analysis; Silicon; Conductance; IMPATT diode; Series resistance; Small signal; Susceptance;
Conference_Titel :
Microwave Conference, 2007. APMC 2007. Asia-Pacific
Conference_Location :
Bangkok
Print_ISBN :
978-1-4244-0748-4
Electronic_ISBN :
978-1-4244-0749-1
DOI :
10.1109/APMC.2007.4555004
