Title :
Low phase-noise balanced Colpitt InGaP-GaAs HBT VCOs with wide frequency tuning range and small VCO-gain variation
Author_Institution :
Microwave & High Speed Electron. Res. Centre, Ericsson AB, Molndal
Abstract :
Low phase-noise InGaP-GaAs HBT VCOs, utilizing an on-chip ´wide tuning range varactor´, have been designed, fabricated, and characterized. The primary design goals were low phase noise, wide continuous frequency tuning and small VCO- gain variation. Two types of varactor were compared, a square varactor and a finger varactor. The square varactor achieves a frequency tuning of 27%, and the finger varactor 21%. The phase noise is typically -100 dBc/Hz at 100 kHz offset frequency. A VCO gain (sensitivity) of 160 MHz/V is obtained with a variation of less than 10%. The power consumption is controlled by the core DC-current and is of the order 50-100 mW.
Keywords :
circuit tuning; gallium arsenide; heterojunction bipolar transistors; indium compounds; low-power electronics; phase noise; varactors; voltage-controlled oscillators; Colpitt HBT VCO; InGaP-GaAs; core DC-current; finger varactor; frequency tuning; low phase-noise balanced oscillator; on-chip wide tuning range varactor; power 50 mW to 100 mW; power consumption; square varactor; Fingers; Frequency shift keying; Heterojunction bipolar transistors; Millimeter wave technology; Noise level; Phase locked loops; Phase noise; Tuning; Varactors; Voltage-controlled oscillators; InGaP-GaAs HBT; VCO; component; low phase noise;
Conference_Titel :
Microwave Conference, 2007. APMC 2007. Asia-Pacific
Conference_Location :
Bangkok
Print_ISBN :
978-1-4244-0748-4
Electronic_ISBN :
978-1-4244-0749-1
DOI :
10.1109/APMC.2007.4555005