DocumentCode
1980104
Title
A Fin-type independent-double-gate NFET
Author
Fried, D.M. ; Nowak, E.J. ; Kedzierski, J. ; Duster, J.S. ; Komegay, K.T.
Author_Institution
AIMS Res. Group, Cornell Univ., Ithaca, NY, USA
fYear
2003
fDate
23-25 June 2003
Firstpage
45
Lastpage
46
Abstract
We present, to our knowledge, the first published experimental integration of two independent gates on a FinFET. The devices have symmetric gate oxide physical thicknesses of 8.5 nm, gate lengths ranging from 0.25 /spl mu/m to 5 /spl mu/m, and designed fin thicknesses ranging from 10 nm to 100 nm. Independent-gate operation is demonstrated by modulating saturated drain current with both front and back gate voltages.
Keywords
field effect transistors; 0.25 to 5 micron; 10 to 100 nm; 8.5 nm; double-gate NFET; finFET; modulating saturated drain current; symmetric gate oxide; CMOS technology; Circuits; Dielectrics; Double-gate FETs; Electrodes; Etching; FinFETs; Lithography; Plasma applications; Silicon;
fLanguage
English
Publisher
ieee
Conference_Titel
Device Research Conference, 2003
Conference_Location
Salt Lake City, UT, USA
Print_ISBN
0-7803-7727-3
Type
conf
DOI
10.1109/DRC.2003.1226864
Filename
1226864
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