Title :
A −131-dBc/Hz, 20-MHz MEMS oscillator with a 6.9-mW, 69-kΩ, gain-tunable CMOS TIA
Author :
Seth, Siddharth ; Wang, Shasha ; Kenny, Thomas ; Murmann, Boris
Author_Institution :
Dept. of Electr. Eng., Stanford Univ., Stanford, CA, USA
Abstract :
We present the analysis, design, and measurement results of a low-noise, low-power MEMS oscillator at 20 MHz. The oscillator consists of a high-Q differential resonator, which is wire-bonded to a high-gain CMOS transimpedance amplifier (TIA). Measurement results show that the TIA achieves a tunable gain from 12 kΩ to 69 kΩ. The phase noise floor of the oscillator´s output voltage is at -131 dBc/Hz, while the differential peak-to-peak swing can be varied between 160 mV and 1700 mV by an on-chip automatic level control (ALC) loop. The TIA, fabricated in a 0.35-μm CMOS process, occupies an area of 0.15 mm2 and dissipates 6.9 mW from a 2.5 V supply.
Keywords :
CMOS integrated circuits; micromechanical devices; operational amplifiers; oscillators; CMOS process; differential peak-to-peak swing; gain-tunable CMOS TIA; high-Q differential resonator; high-gain CMOS transimpedance amplifier; low-noise low-power MEMS oscillator; on-chip automatic level control loop; output voltage; phase noise floor; CMOS integrated circuits; Floors; Gain; Micromechanical devices; Phase noise;
Conference_Titel :
ESSCIRC (ESSCIRC), 2012 Proceedings of the
Conference_Location :
Bordeaux
Print_ISBN :
978-1-4673-2212-6
Electronic_ISBN :
1930-8833
DOI :
10.1109/ESSCIRC.2012.6341332
