DocumentCode
1980154
Title
Light emission from Al/sub 2/O/sub 3//Si/sub 1-x/Ge/sub x//Si MOS tunnel diodes
Author
Lin, C.Y. ; Lai, L.H. ; Chin, A. ; Hou, Y.T. ; Li, M.F. ; McAlister, S.P.
Author_Institution
Dept. of Electron. Eng., Nat. Chiao Tung Univ., Hsinchu, Taiwan
fYear
2003
fDate
23-25 June 2003
Firstpage
51
Lastpage
52
Abstract
Light emission at /spl sim/1.3 /spl mu/m was measured at room temperature in Al/sub 2/O/sub 3///Si/sub 1-x/Ge/sub x/ MOS tunnel diodes on Si substrates. The merits of this MOS LED is its compatibility with VLSI and photon energy \n\n\t\t
Keywords
Ge-Si alloys; MOSFET; alumina; light emitting diodes; optical interconnections; semiconductor materials; tunnel diodes; 1.3 micron; 293 to 298 K; Al/sub 2/O/sub 3/-Si/sub 1-x/Ge/sub x/-Si; Al/sub 2/O/sub 3//Si/sub 1-x/Ge/sub x//Si MOS tunnel diodes; MOS LED; Si; Si substrates; VLSI; light emission; photon energy; room temperature; Dielectric substrates; Diodes; Energy measurement; Germanium silicon alloys; Indium tin oxide; Low voltage; MOSFET circuits; Quantization; Silicon germanium; Wavelength measurement;
fLanguage
English
Publisher
ieee
Conference_Titel
Device Research Conference, 2003
Conference_Location
Salt Lake City, UT, USA
Print_ISBN
0-7803-7727-3
Type
conf
DOI
10.1109/DRC.2003.1226867
Filename
1226867
Link To Document