Title :
Fringe field and quantum mechanical effects on capacitance characteristics of sub-0.1 micron MOS devices
Author :
Gunther, N.G. ; Mutlu, A.A. ; Rahman, M.
Author_Institution :
Electron Devices Lab., Santa Clara Univ., CA, USA
Abstract :
In this paper, we compare the 3D VQM expressions obtained for the capacitive energy of the oxide region and the depletion region with those for a device with infinitely large gate. The 3D quantum mechanical effect of the fringe field on the energy is then extracted as a correction factor to the capacitance for each region.
Keywords :
MOS capacitors; semiconductor device models; 0.1 micron; capacitance; correction factor; fringe field; quantum mechanical effects; submicron MOS devices; variational quantum mechanical model; Capacitance-voltage characteristics; Closed-form solution; Doping; Electrostatics; Fluctuations; MOS capacitors; MOS devices; Quantum capacitance; Quantum mechanics; Semiconductor process modeling;
Conference_Titel :
Device Research Conference, 2003
Conference_Location :
Salt Lake City, UT, USA
Print_ISBN :
0-7803-7727-3
DOI :
10.1109/DRC.2003.1226868
