DocumentCode
1980219
Title
InP-based Resonant Tunnelnig Diode/HEMT Integrated Circuits for Ultrahigh-Speed Operation
Author
Maezawa, Koichi ; Mizutani, Takashi
fYear
2006
fDate
7-11 May 2006
Firstpage
252
Lastpage
257
Keywords
Circuits; Diodes; Frequency; HEMTs; III-V semiconductor materials; Logic devices; Logic gates; Resonant tunneling devices; Voltage; Voltage-controlled oscillators;
fLanguage
English
Publisher
ieee
Conference_Titel
Indium Phosphide and Related Materials Conference Proceedings, 2006 International Conference on
Print_ISBN
0-7803-9558-1
Type
conf
DOI
10.1109/ICIPRM.2006.1634162
Filename
1634162
Link To Document