Title :
InP-based Resonant Tunnelnig Diode/HEMT Integrated Circuits for Ultrahigh-Speed Operation
Author :
Maezawa, Koichi ; Mizutani, Takashi
Keywords :
Circuits; Diodes; Frequency; HEMTs; III-V semiconductor materials; Logic devices; Logic gates; Resonant tunneling devices; Voltage; Voltage-controlled oscillators;
Conference_Titel :
Indium Phosphide and Related Materials Conference Proceedings, 2006 International Conference on
Print_ISBN :
0-7803-9558-1
DOI :
10.1109/ICIPRM.2006.1634162
