Dependence of the cut off frequency on Ge profiles, base and collector widths in SiGe HBTs

Author

Mau, H. ; Nuernbergk, D. ; Schwierz, F. ; Rossberg, Michael ; Paasch, G. ; Schipanski, D.

Author_Institution

Dept. of Solid State Electron., Tech. Univ. Ilmenau, Germany

fYear

1998

fDate

2-4 Mar 1998

Firstpage

33

Lastpage

36

Abstract

The dynamic performance of SiGe HBTs in terms of the cut off frequency is investigated by numerical device simulation. Simulations using both the drift diffusion and the energy transport model are carried out for a variety of different HBT structures. Based on the simulation results, design criteria for SiGe HBTs are derived. Limits of the validity of the drift diffusion model are discussed

Keywords

Ge-Si alloys; doping profiles; heterojunction bipolar transistors; microwave bipolar transistors; millimetre wave bipolar transistors; semiconductor device models; semiconductor materials; 40 to 180 GHz; Ge profile dependence; SiGe; SiGe HBTs; base width dependence; collector width dependence; cut off frequency; design criteria; drift diffusion model; dynamic performance; energy transport model; numerical device simulation; Bipolar transistors; Doping profiles; Frequency; Germanium silicon alloys; Heterojunction bipolar transistors; Numerical simulation; Semiconductor process modeling; Silicon germanium; Solid modeling; Solid state circuits;

fLanguage

English

Publisher

ieee

Conference_Titel

Devices, Circuits and Systems, 1998. Proceedings of the 1998 Second IEEE International Caracas Conference on

Conference_Location

Isla de Margarita

Print_ISBN

0-7803-4434-0

Type

conf

DOI

10.1109/ICCDCS.1998.705800

Filename

705800