Title :
Dependence of the cut off frequency on Ge profiles, base and collector widths in SiGe HBTs
Author :
Mau, H. ; Nuernbergk, D. ; Schwierz, F. ; Rossberg, Michael ; Paasch, G. ; Schipanski, D.
Author_Institution :
Dept. of Solid State Electron., Tech. Univ. Ilmenau, Germany
Abstract :
The dynamic performance of SiGe HBTs in terms of the cut off frequency is investigated by numerical device simulation. Simulations using both the drift diffusion and the energy transport model are carried out for a variety of different HBT structures. Based on the simulation results, design criteria for SiGe HBTs are derived. Limits of the validity of the drift diffusion model are discussed
Keywords :
Ge-Si alloys; doping profiles; heterojunction bipolar transistors; microwave bipolar transistors; millimetre wave bipolar transistors; semiconductor device models; semiconductor materials; 40 to 180 GHz; Ge profile dependence; SiGe; SiGe HBTs; base width dependence; collector width dependence; cut off frequency; design criteria; drift diffusion model; dynamic performance; energy transport model; numerical device simulation; Bipolar transistors; Doping profiles; Frequency; Germanium silicon alloys; Heterojunction bipolar transistors; Numerical simulation; Semiconductor process modeling; Silicon germanium; Solid modeling; Solid state circuits;
Conference_Titel :
Devices, Circuits and Systems, 1998. Proceedings of the 1998 Second IEEE International Caracas Conference on
Conference_Location :
Isla de Margarita
Print_ISBN :
0-7803-4434-0
DOI :
10.1109/ICCDCS.1998.705800
