• DocumentCode
    1980235
  • Title

    Q-Factor Behavior Study of On-Chip Inductors Using Transmission-Line Model

  • Author

    Huang, C.-H. ; Horng, T.S.

  • Author_Institution
    Dept. of Electr. Eng., Nat. Sun Yat-Sen Univ., Kaohsiung
  • fYear
    2007
  • fDate
    11-14 Dec. 2007
  • Firstpage
    1
  • Lastpage
    4
  • Abstract
    This paper presents a novel transmission-line model for on-chip inductors to derive their quality (Q) factors in terms of the well-known transmission-line parameters in closed forms. The derived formulas are general and suitable for all kinds of on-chip inductors when used to account for the frequency dependence of Q factors. The presented formulas can also uniquely distinguish the improvement in Q-factor frequency responses between the reduction of conductor loss and dielectric loss. The dielectric loss mainly includes eddy- current loss and substrate-leakage loss. Several 90-nm RF- CMOS inductors have been studied for their Q-factor behavior under different design configurations and process variations.
  • Keywords
    Q-factor; dielectric losses; eddy current losses; inductors; transmission lines; Q-factor; RF-CMOS inductor; conductor loss; dielectric loss; eddy-current loss; on-chip inductor; substrate-leakage loss; transmission-line model; Conducting materials; Conductors; Dielectric losses; Dielectric substrates; Dispersion; Frequency; Inductors; Propagation losses; Q factor; Transmission lines;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Microwave Conference, 2007. APMC 2007. Asia-Pacific
  • Conference_Location
    Bangkok
  • Print_ISBN
    978-1-4244-0748-4
  • Electronic_ISBN
    978-1-4244-0749-1
  • Type

    conf

  • DOI
    10.1109/APMC.2007.4555010
  • Filename
    4555010