Title :
ICP Etching Process Development based on Cl2/H2 Chemistry and Adapted to Non-Thermalized InP Wafers for the Realization of High Aspect Ratio and Vertical Sidewall Deep Ridge Waveguides and Buried Heterostructures
Author :
Guilet, S. ; Bouchoule, S. ; Jany, C. ; Corr, C.S. ; Chabert, P.
Author_Institution :
Lab. de Photonique et de Nanostructures, CNRS, Marcoussis
Abstract :
ICP etching using Cl2/H2 chemistry is studied to realize deep ridges with smooth and vertical sidewall. The influence of Cl2/H2 ratio on the etching mechanism is investigated for both InP bulk layers and InGa(Al)As/InP heterostructures. The process is optimised for non-thermalized InP wafers to avoid the use of thermal grease
Keywords :
III-V semiconductors; chlorine; etching; gallium arsenide; hydrogen; indium compounds; optical waveguides; ridge waveguides; semiconductor heterojunctions; Cl2-H2; Cl2/H2 chemistry; ICP etching; InGa(Al)As-InP; InGa(Al)As/InP heterostructures; buried heterostructures; nonthermalized InP wafers; vertical sidewall deep ridge waveguides; Aluminum; Electrodes; Etching; Hydrogen; Indium phosphide; Inductors; Plasma applications; Plasma chemistry; Plasma temperature; Silicon;
Conference_Titel :
Indium Phosphide and Related Materials Conference Proceedings, 2006 International Conference on
Conference_Location :
Princeton, NJ
Print_ISBN :
0-7803-9558-1
DOI :
10.1109/ICIPRM.2006.1634164
