Title :
Polarity dependence of the reliability characteristics of HfO/sub 2/ with poly-Si gate electrode
Author :
Kim, Y.H. ; Onishi, K. ; Kang, C.S. ; Choi, R. ; Cho, H.-J. ; Akbar, M.S. ; Lee, J.C.
Author_Institution :
Dept. of Electr. & Comput. Eng., Texas Univ., Austin, TX, USA
Abstract :
In this paper, polysilicon gate electrode was used in order to investigate the effects of both electron and hole injection from the gate. HfO/sub 2/ was directly deposited on Si-substrate without any intentional interface layer. In addition to polarity dependence of HfO/sub 2/breakdown characteristics, charge trapping behavior under unipolar AC stressing, and bias temperature instability under gate injection and substrate injection have been investigated.
Keywords :
MOSFET; charge injection; electron traps; elemental semiconductors; hafnium compounds; hole traps; semiconductor device breakdown; semiconductor device reliability; silicon; stress effects; substrates; AC stressing; HfO/sub 2/-Si; HfO/sub 2/breakdown; Si substrate injection; bias temperature instability; charge trapping; electron injection; gate injection; hole injection; poly-Si gate electrode; polysilicon gate electrode; reliability; Electric breakdown; Electrodes; Hafnium oxide; Voltage;
Conference_Titel :
Device Research Conference, 2003
Conference_Location :
Salt Lake City, UT, USA
Print_ISBN :
0-7803-7727-3
DOI :
10.1109/DRC.2003.1226870
