Title :
Multiple delta doping for improved driftzone design for lateral silicon power MOSFETs
Author :
Tolksdorf, C. ; Ludsteck, A. ; Schmidt, M. ; Sedlmaier, S. ; Schulze, J. ; Eisele, I. ; Deboy, G.
Author_Institution :
Inst. of Phys., Univ. of German Fed. Armed Forces Munich, Neubiberg, Germany
Abstract :
In this paper, we expect higher doping concentrations to reduce the resistance of the drift zone in forward bias, on the other hand leakage current in reverse bias must be kept at a minimum and the breakdown voltage unchanged. An unintentional n-doping of 1.10/sup 16/ cm/sup -3/, that is characteristic for MBE (Molecular Beam Epitaxy) grown samples, is currently still degrading the reverse bias characteristics and will be improved in further test structures.
Keywords :
electric resistance; elemental semiconductors; leakage currents; power MOSFET; semiconductor device breakdown; semiconductor device models; semiconductor doping; silicon; MBE; Si; breakdown voltage; doping concentrations; electric resistance; leakage current; molecular beam epitaxy; multiple delta doping; reverse bias characteristics; silicon power MOSFET; Doping; Electric resistance; Leakage current; MOSFETs; Molecular beam epitaxial growth; Physics; Silicon; Testing; Thermal stresses; Voltage;
Conference_Titel :
Device Research Conference, 2003
Conference_Location :
Salt Lake City, UT, USA
Print_ISBN :
0-7803-7727-3
DOI :
10.1109/DRC.2003.1226871
