Title :
Direct bonding of GaInAsP/InP membrane structure on SOI wafer
Author :
Maruyama, Takeo ; Okumura, Tadashi ; Sakamoto, Shinichi ; Miura, Koji ; Nishimoto, Yoshifumi ; Arai, Shigehisa
Author_Institution :
Quantum Nanoelectronics Res. Center, Tokyo Inst. of Technol.
Abstract :
Wafer bonding technology was investigated to integrate active photonic devices on a silicon on insulator (SOI) wafer for very compact photonic-integrated circuits. A single-quantum-well (SQW) GaInAsP/InP membrane structure bonded onto an SOI wafer was successfully obtained by a direct bonding method with a thermal annealing at 300-450degC under H2 atmosphere. The PL intensity of the SQW membrane structure did not degrade after this direct bonding process and its spectral shape did not change. This wafer bonding technique can be applied to realize a direct optical coupling through SOI passive waveguides from membrane active region
Keywords :
III-V semiconductors; annealing; gallium arsenide; gallium compounds; indium compounds; integrated optics; integrated optoelectronics; membranes; photoluminescence; semiconductor quantum wells; silicon-on-insulator; spectral line breadth; wafer bonding; 300 to 450 degC; GaInAsP-InP-Si-SiO2; GaInAsP/InP membrane structure; SOI passive waveguides; SOI wafer; Si-SiO2; active photonic device integration; direct bonding; direct optical coupling; membrane active region; photoluminescence; photonic-integrated circuits; silicon on insulator wafer; single-quantum-well; spectral shape; thermal annealing; wafer bonding technology; Annealing; Atmosphere; Biomembranes; Circuits; Indium phosphide; Optical waveguides; Photonics; Silicon on insulator technology; Thermal degradation; Wafer bonding;
Conference_Titel :
Indium Phosphide and Related Materials Conference Proceedings, 2006 International Conference on
Conference_Location :
Princeton, NJ
Print_ISBN :
0-7803-9558-1
DOI :
10.1109/ICIPRM.2006.1634167
