Title :
High power AlGaN/GaN HEMTs grown by plasma-assisted MBE operating at 2 to 25 GHz
Author :
Waechtler, T. ; Manfra, Michael J. ; Weimann, N.G.
Author_Institution :
Lucent Technol. Bell Labs., Murray Hill, NJ, USA
Abstract :
In this paper, AlGaN/GaN heterostructures grown by plasma-assisted MBE on semi-insulating 6H-SiC. Optimization of MBE growth conditions now allows for the routine production of heterostructures with a room temperature mobility of 1400cm/sup 2//Vs at a sheet density of 1.1/spl times/10/sup 13/cm/sup -2/. We discuss heterostructure designs found to minimize RF dispersion. All power data reported is achieved without the use of a SiN surface passivation layer.
Keywords :
III-V semiconductors; aluminium compounds; gallium compounds; molecular beam epitaxial growth; plasma materials processing; power HEMT; semiconductor growth; wide band gap semiconductors; 2 to 25 GHz; 293 to 298 K; AlGaN-GaN; AlGaN/GaN heterostructures growth; plasma-assisted MBE growth; power AlGaN/GaN HEMT; room temperature mobility; sheet density; Aluminum gallium nitride; Gallium nitride; HEMTs; MODFETs; Passivation; Plasma density; Plasma temperature; Production; Radio frequency; Silicon compounds;
Conference_Titel :
Device Research Conference, 2003
Conference_Location :
Salt Lake City, UT, USA
Print_ISBN :
0-7803-7727-3
DOI :
10.1109/DRC.2003.1226872
