Title :
A Novel Method for HBT Intrinsic Collector Resistance Extraction from S-Parameters
Author :
Johansen, Tom ; Krozer, Viktor ; Hadziabdic, Dzenan ; Jiang, Chenhui ; Konczykowska, Agnieszka ; Dupuy, Jean-Yves
Author_Institution :
Electro-Sci. Sect. Syst., Tech. Univ. of Denmark, Lyngby
Abstract :
In this paper the extraction of series resistances for high-speed InP DHBT devices is investigated. Known extraction methods based on measured S-parameters are reviewed and error terms are identified. A novel method for intrinsic collector resistance extraction is proposed. The method is based on S- parameters measured in saturation and forward active regions. The results are applied to the large-signal modeling of InP DHBT devices using the UCSD HBT model and very accurate model response is obtained.
Keywords :
S-parameters; heterojunction bipolar transistors; indium compounds; DHBT devices; HBT intrinsic collector resistance extraction; S-parameters; UCSD HBT model; series resistances; Capacitance; Contact resistance; DH-HEMTs; Data mining; Electrical resistance measurement; Equivalent circuits; Heterojunction bipolar transistors; Indium phosphide; Microwave theory and techniques; Scattering parameters;
Conference_Titel :
Microwave Conference, 2007. APMC 2007. Asia-Pacific
Conference_Location :
Bangkok
Print_ISBN :
978-1-4244-0748-4
Electronic_ISBN :
978-1-4244-0749-1
DOI :
10.1109/APMC.2007.4555014
