Title :
Temperature dependence of the current-voltage characteristics of AlGaN/GaN HEMT
Author :
Shen, L. ; Chini, A. ; Coffie, R. ; Buttari, D. ; Heikman, S. ; Keller, S. ; Mishra, U.
Author_Institution :
Dept. of Electr. and Comput. Eng., California Univ., Santa Barbara, CA, USA
Abstract :
In this paper, we report on the DC and gate-lag pulsed (200ns) I-V characteristics of GaN-based HEMTs with and without SiN passivation between 77 K and 300 K.
Keywords :
III-V semiconductors; aluminium compounds; gallium compounds; passivation; power HEMT; silicon compounds; wide band gap semiconductors; 200 ns; 77 to 300 K; AlGaN-AlN-GaN; AlGaN/GaN HEMT; DC current-voltage characteristics; SiN; SiN passivation; gate-lag current-voltage characteristics; Aluminum gallium nitride; Current-voltage characteristics; Gallium nitride; HEMTs; Knee; Passivation; Silicon carbide; Silicon compounds; Temperature dependence; Thermal conductivity;
Conference_Titel :
Device Research Conference, 2003
Conference_Location :
Salt Lake City, UT, USA
Print_ISBN :
0-7803-7727-3
DOI :
10.1109/DRC.2003.1226873
