DocumentCode :
1980325
Title :
Low-phase-noise 3.4–4.5 GHz dynamic-bias class-C CMOS VCOs with a FoM of 191 dBc/Hz
Author :
Fanori, Luca ; Andreani, Pietro
Author_Institution :
Dept. of Electr. & Inf. Technol., Lund Univ., Lund, Sweden
fYear :
2012
fDate :
17-21 Sept. 2012
Firstpage :
406
Lastpage :
409
Abstract :
This paper presents two class-C CMOS VCOs with a dynamic bias of the core transistors, which maximizes the oscillation amplitude without compromising the robustness of the oscillation start-up. The VCOs have been implemented in a 90 nm CMOS process and cover the frequency band between 3.4 GHz and 4.5 GHz, for a 28% tuning range. Drawing 5.5 mA from 1.2 V, the phase noise is lower than -152 dBc/Hz at a 20 MHz offset from a 4 GHz carrier. The resulting phase-noise FoM is 191 dBc/Hz and varies less than 1 dB across the tuning range.
Keywords :
CMOS integrated circuits; transistor circuits; voltage-controlled oscillators; CMOS process; FoM; class-C CMOS VCO; core transistors; frequency 3.4 GHz to 4.5 GHz; low-phase-noise; Bandwidth; CMOS integrated circuits; Phase noise; Tuning; Voltage-controlled oscillators; CMOS; VCO; class-C; feedback class-C; phase noise; start-up;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
ESSCIRC (ESSCIRC), 2012 Proceedings of the
Conference_Location :
Bordeaux
ISSN :
1930-8833
Print_ISBN :
978-1-4673-2212-6
Electronic_ISBN :
1930-8833
Type :
conf
DOI :
10.1109/ESSCIRC.2012.6341341
Filename :
6341341
Link To Document :
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