Title :
Generation of coherent GHz acoustic phonons in AlGaN/GaN microwave field effect transistors
Author :
Jung-Hoon Song ; Qiang Zhang ; Patterson, W., III ; Nurmikko, A.V. ; Uren, M.J. ; Hilton, K.P. ; Balmer, R.S. ; Martin, T.
Author_Institution :
Div. of Eng., Brown Univ., Providence, RI, USA
Abstract :
In this paper, the presence of large amplitude GHz coherent phonons in GaN/AlGaN microwave HEMTs, by detecting the phonons using a local reflective optical probe at near normal incidence to active device, tightly focused (1 um) and scanned in the vicinity of the source-gate-drain region. Estimates of the total spatially integrated vibrational energy released from the 2D gas suggests that a possibly significant fraction of the dissipative energy can be released from the HEMT into coherent phonons, providing a potential avenue for bypassing conventional thermal management schemes.
Keywords :
III-V semiconductors; aluminium compounds; gallium compounds; high electron mobility transistors; microwave field effect transistors; surface phonons; wide band gap semiconductors; 2D gas; AlGaN-GaN; AlGaN/GaN microwave field effect transistors; GaN/AlGaN microwave HEMT; coherent GHz acoustic phonons; local reflective optical probe method; source-gate-drain region; thermal management; Acoustic devices; Aluminum gallium nitride; FETs; Gallium nitride; HEMTs; MODFETs; Microwave devices; Microwave generation; Phonons; Thermal management;
Conference_Titel :
Device Research Conference, 2003
Conference_Location :
Salt Lake City, UT, USA
Print_ISBN :
0-7803-7727-3
DOI :
10.1109/DRC.2003.1226874
