Title :
High-power K-band submicron insulating gate heterostructure field-effect transistors
Author :
Tarakji, A. ; Simin, G. ; Fatima, H. ; Adivarahan, V. ; Gaevski, M. ; Sun, W. ; Yang, J. ; Khan, M.A. ; Shur, M.S. ; Gaska, R.
Author_Institution :
Dept. of Electr. Eng., South Carolina Univ., Columbia, SC, USA
Abstract :
In this paper, we report the high performance quarter micron gate Si/sub 3/N/sub 4//AlGaN/GaN metal-insulator-semiconductor heterostructure field effect transistors (MISHFET) with a 5 W/mm CW power at 26 GHz at drain bias of 35 V. The MISHFETs to have the same power gain and power added efficiency as the HFETs, in spite of lower transconductance. An improved RF linearity of MISHFETs is attributed to more linear transconductance-gate bias dependence.
Keywords :
III-V semiconductors; MISFET; aluminium compounds; gallium compounds; power field effect transistors; silicon compounds; wide band gap semiconductors; 26 GHz; 35 V; MISHFET; RF linearity; Si/sub 3/N/sub 4/-AlGaN-GaN; Si/sub 3/N/sub 4//AlGaN/GaN metal-insulator-semiconductor heterostructure field effect transistors; high power K-band submicron insulating gate heterostructure field-effect transistors; lower transconductance; power added efficiency; power gain; Aluminum gallium nitride; Gallium nitride; HEMTs; Insulation; K-band; MODFETs; Metal-insulator structures; Performance gain; Radio frequency; Transconductance;
Conference_Titel :
Device Research Conference, 2003
Conference_Location :
Salt Lake City, UT, USA
Print_ISBN :
0-7803-7727-3
DOI :
10.1109/DRC.2003.1226875
