Title :
High compositional uniformity of epitaxial InGaAlAs on InP grown by MOVPE for uncooled laser diode
Author :
Shimizu, Eiichi ; Nakamura, Masashi ; Momoi, Hajime ; Ikeda, Eiji ; Sugawara, Shizuo ; Nakata, Hirofumi
Author_Institution :
Dev. Center, Nikko-Materials Co., Ltd., Saitama
Abstract :
High compositional uniformity of InGaAlAs alloy on InP was demonstrated in a high-speed rotating disk MOVPE. The factors that influenced the compositional uniformity were investigated. PL wavelength range of less than 6 nm over 80% areas of 2-inch wafers was achieved at 1310 nm MQW structure with multiple wafers. Laser characteristic profile was good linearity and slope efficiency. The characteristics temperature, T0, was 95.5 K over a temperature range from 25 to 85 degrees Celsius
Keywords :
Debye temperature; III-V semiconductors; MOCVD; aluminium compounds; chemical analysis; gallium arsenide; indium compounds; photoluminescence; quantum well lasers; semiconductor growth; semiconductor quantum wells; vapour phase epitaxial growth; 1310 nm; 2 inch; 25 to 85 degC; 95.5 K; InGaAlAs-InP; InP; characteristics temperature; compositional uniformity; epitaxial InGaAlAs; high-speed rotating disk MOVPE; laser characteristic profile; multiple quantum well structure; photoluminescence; slope efficiency; uncooled laser diode; Costs; Diode lasers; Epitaxial growth; Epitaxial layers; Indium phosphide; Optical fiber communication; Optical fiber devices; Optical materials; Quantum well devices; Temperature distribution;
Conference_Titel :
Indium Phosphide and Related Materials Conference Proceedings, 2006 International Conference on
Conference_Location :
Princeton, NJ
Print_ISBN :
0-7803-9558-1
DOI :
10.1109/ICIPRM.2006.1634170
