Title :
Low DC-driving-voltage crystal oscillator
Author_Institution :
Fac. of Eng., Yokohama Nat. Univ., Japan
Abstract :
Low power requirements in electronic equipment needs low dc-driving-voltage crystal oscillators. This paper presents a low dc-voltage design of the crystal oscillator by using depletion+enhancement MOSFET (D+E MOSFET). D+E MOSFET is a device in which an electric-field is embedded, so that it requires no gate bias voltage for the amplification act. Thus low dc-driving-voltage is expected when the D+E MOSFET is used as an active element of the oscillator circuit. According to this idea, a low-dc-voltage Colpitts crystal oscillator has been devised. The oscillator actually produced 10 MHz output voltage for dc-driving-voltage as low as 0.45 V. The peak value of the output signal voltage of oscillation is close to a half of the dc-driving voltage. Thus it has been concluded that the proposed low dc driving-voltage crystal oscillator will be useful for achieving low power electronic equipment
Keywords :
MOSFET circuits; crystal oscillators; driver circuits; low-power electronics; 0.45 V; 10 MHz; Colpitts crystal oscillator; DC-driving-voltage; crystal oscillator; depletion+enhancement MOSFET; low power requirements; oscillator circuit; output signal voltage; Active circuits; Bipolar transistors; Capacitance; Electronic equipment; Equivalent circuits; FETs; Resonator filters; Steady-state; Voltage; Voltage-controlled oscillators;
Conference_Titel :
Frequency and Time Forum, 1999 and the IEEE International Frequency Control Symposium, 1999., Proceedings of the 1999 Joint Meeting of the European
Conference_Location :
Besancon
Print_ISBN :
0-7803-5400-1
DOI :
10.1109/FREQ.1999.840794
