Title :
A physics-based model of frequency-dependent electrical characteristics of GaN MESFETs
Author :
Islam, S.S. ; Anwar, A.F.M. ; Webster, R.T.
Author_Institution :
Dept. of Electr. Eng., Rochester Inst. of Technol., NY, USA
Abstract :
In this paper, the applied bias, detrapping time and temperature dependences of frequency dispersion of output resistance and transconductance of a GaN MESFET are reported.
Keywords :
III-V semiconductors; Schottky gate field effect transistors; gallium compounds; semiconductor device models; wide band gap semiconductors; GaN; GaN MESFET; detrapping time; electric resistance; frequency dispersion; frequency-dependent electrical characteristics; transconductance; Electric variables; Electrons; Frequency; Gallium nitride; MESFETs; Military computing; Temperature dependence; Temperature sensors; Transconductance; Voltage;
Conference_Titel :
Device Research Conference, 2003
Conference_Location :
Salt Lake City, UT, USA
Print_ISBN :
0-7803-7727-3
DOI :
10.1109/DRC.2003.1226876
